The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

4 JSAP-OSA Joint Symposia 2020 » 4.1 Plasmonics and Nanophotonics

[9p-Z16-1~14] 4.1 Plasmonics and Nanophotonics

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z16

Nicholas Smith(Osaka Univ.), Takuo Tanaka(RIKEN)

4:45 PM - 5:00 PM

[9p-Z16-11] Optoelectronic memory device via electrically controlling phase change material with near-infrared response

〇(M2)HsinHua Chen1, KuoPing Chen2 (1.Institute of Photonic System, National Chiao Tung University, Taiwan, 2.Institute of Imaging and Biomedical Photonics, National Chiao Tung University, Taiwan)

Keywords:Vanadium dioxide, Memory device, Electrically tuning

In this research, a volatile memory device based on a phase change material (PCM) was demonstrated. Via electrically tuning the temperature of VO2 thin films, near-infrared optical transmittance is recorded to display the different optoelectronics memory states.