The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

3 Optics and Photonics » 3.7 Laser processing

[9p-Z18-1~21] 3.7 Laser processing

Wed. Sep 9, 2020 1:00 PM - 7:00 PM Z18

Mitsuhiro Terakawa(Keio Univ.), Satoshi Hasegawa(Utsunomiya Univ.), Kotaro Obata(RIKEN), Seisuke Nakashima(Shizuoka Univ.)

1:45 PM - 2:00 PM

[9p-Z18-4] Discussion for formation mechanisms of periodic surface structures on semiconductors irradiated by mid-infrared free electron laser

Yohei Tanaka1, Chikai Hosokawa1, Masaki Hashida1,2, Heishun Zen3, Takeshi Nagashima4, Norimasa Ozaki5, Shunsuke Inoue1,2, Shuji Sakabe1,2 (1.GSS, Kyoto Univ., 2.ICR, Kyoto Univ., 3.IAE, Kyoto Univ., 4.Setsunan Univ., 5.GSE, Osaka Univ.)

Keywords:Laser Induced Periodic Surface Structures, mid-infrared free electron laser, semiconductor

We have reported that the irradiation of long-wavelength and high-intensity mid-infrared free electron laser (MIR-FEL) on semiconductors can form fine periodic surface structures (LIPSS) with periodic interspaces large enough to be observed by visible lasers. This time, we have analyzed the formation threshold fluences and periodic interspaces of the LIPSS formed by MIR-FEL in detail and compared them with those of LIPSS formed by visible or near-infrared laser irradiation, and estimated necessary time resolution to observe the LIPSS formation process.