[9p-Z19-1~16] 3.15 シリコンフォトニクス・集積フォトニクス

▲ [9p-Z19-11] Numerical analysis of low-Temperature temperature dependence modulation property of
III-V/Si hybrid MOS optical modulator

〇(M2)Qianfeng Chen¹、Kasidit Toprasertpong¹、Shinichi Takagi¹、Mitsuru Takenaka¹ (1.The Univ. of Tokyo)

キーワード：III-V/Si hybrid MOS optical modulator, low-temperature modulation property

A Si optical modulator based on a III-V/Si hybrid MOS capacitor exhibits high-efficiency and low-loss optical phase modulation, suitable for optical interconnect in datacenter [1]. with low energy consumption and high modulation efficiency is important to cloud data centers. III-V/Si hybrid metal-oxide-semiconductor (MOS) optical modulators are attractive in terms of higher modulation efficiency and meanwhile acceptable modulation bandwidth[1]. To extend the application of III-V/Si hybrid MOS optical modulator to different temperature range, for example, outer- space communication and quantum computation where the operation temperature is very low. Therefore, it is important to understand more about the low-temperature properties of the modulator.dependence of such device. Since the III-V/Si hybrid MOS modulator uses carrier accumulation at the MOS interfaces, we expect well-behaved phase modulation even at low temperature. In this paper, we numerically analyze the temperature dependence of the modulation efficiency of the III-V/Si hybrid MOS optical phase shifter.