Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope

Makoto Kasu; Sayleap Sdoeung; Kohei Sasaki; Toshiyuki Oishi; Katsumi Kawasaki; Jun Hirabayashi; Akito Kuramata

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Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

4:15 PM - 4:30 PM

[9p-Z20-11] Origin of Reverse Leakage Current in EFG β-Gallium Oxide Schottky Barrier Diodes Identified by Ultra-High Sensitive Emission Microscope

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Toshiyuki Oishi¹, Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

Keywords:gallium oxide, emission microscope, SBD

By high-senstive emission microscope, we have identified the origin of defects related to the leakage current in HVPE beta-gallium oxide SBD.