Improvement in Electrical Characteristics of Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes depend on Growth Rate of Drift Layer

Chiahung Lin; Satoshi Masuya; Kengo Obayashi; Amutha Thangaraja; Quang Tu Thieu; Fumio Otsuka; Yuki Koishikawa; Kohei Sasaki; Akito Kuramata

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Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

4:30 PM - 4:45 PM

[9p-Z20-12] Improvement in Electrical Characteristics of Ga₂O₃ Schottky Barrier Diodes depend on Growth Rate of Drift Layer

〇Chiahung Lin¹, Satoshi Masuya¹, Kengo Obayashi¹, Amutha Thangaraja¹, Quang Tu Thieu¹, Fumio Otsuka¹, Yuki Koishikawa¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

Keywords:Ga2O3, Schottky Barrier Diodes

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Presentation information

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-12] Improvement in Electrical Characteristics of Ga2O3 Schottky Barrier Diodes depend on Growth Rate of Drift Layer

[9p-Z20-12] Improvement in Electrical Characteristics of Ga₂O₃ Schottky Barrier Diodes depend on Growth Rate of Drift Layer