The 81st JSAP Autumn Meeting, 2020

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

1:30 PM - 1:45 PM

[9p-Z20-2] TEM Observation of Sn-doped m-plane α-Ga2O3

〇Hiroiki Hayakawa1, Junjiroh Kikawa1, Isao Takahashi2, Takashi Shinohe2, Tsutomu Araki1 (1.Ritsumeikan Univ., 2.FLOSFIA)

Keywords:Oxide Semiconductor, Gallium Oxide, TEM

α-Ga2O3 is expected to apply to a next-generation power devices thanks to its wide band-gap 5.3eV and establishment of growth technic such as mist-CVD method. Tottori university reported α-Ga2O3 has different electric characteristics in c-plane and m-plane. It is speculated that this behavior is due to crystal defects. For this reason, we evaluate crystal defects especially dislocation in Sn-doped m-plane α-Ga2O3 using TEM observation. We will report the relationship between dislocation and Sn concentration.