Effect of supply temperature in crystal growth of β-Ga<sub>2</sub>O<sub>3</sub> by direct synthesis method

Shota Kanmoto; Katsushi Nishino

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Wed. Sep 9, 2020 1:00 PM - 5:45 PM Z20

Toshiyuki Kawaharamura(Kochi Univ. of Tech.), Takeyoshi Onuma(Kogakuin Univ.), Kentaro Kaneko(Kyoto Univ.)

3:00 PM - 3:15 PM

[9p-Z20-7] Effect of supply temperature in crystal growth of β-Ga₂O₃ by direct synthesis method

〇Shota Kanmoto¹, Katsushi Nishino¹ (1.Tokushima univ.)

Keywords:Ga2O3, Direct synthesis method

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Presentation information

[9p-Z20-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-Z20-7] Effect of supply temperature in crystal growth of β-Ga2O3 by direct synthesis method

[9p-Z20-7] Effect of supply temperature in crystal growth of β-Ga₂O₃ by direct synthesis method