[9p-Z26-1~14] 9.3 Nanoelectronics

[9p-Z26-13] Theoretical study of reflectometry for fast sensing of an SOI FET sensor

〇Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1.NTT Basic Res. Labs.)

Keywords:silicon FET, sensor

A nano-wire FET enables single-electron detection at room temperature and a reflectometry technique using double LC circuits increases operation speed of the FET to a few hundred MHz. In order to obtain these features, the parameters of LC circuits must be designed according to FET’s structure. In this study, we will discuss about the guideline for designing LC circuits.