[9p-Z26-1~14] 9.3 Nanoelectronics

[9p-Z26-9] Formation of Multi-Terminal Nano-Electrodes by AC Electromigration During Metal Evaporation

〇Takuya Abe^1,3, Hiroshi Suga¹, Kazuhito Tsukagoshi², Yasuhisa Naitoh³ (1.CIT, 2.WPI-MANA NIMS, 3.AIST)

Keywords:nanogap, fine structure, transistor

It has been reported that the platinum nanogap structure becomes a non-volatile memory under the environment of 600℃ or higher. In addition, it has been reported that the transistor operates by controlling the tunnel current between the nanogaps with the gate electric field. We have demonstrated a method for easily forming a nanoscale multi-terminal structure on a flat surface by applying the electro-index method during vapor evaporation to form a nanogap structure.