The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.2 Graphene

[9p-Z29-1~17] 17.2 Graphene

Wed. Sep 9, 2020 1:30 PM - 6:00 PM Z29

Masao Nagase(Tokushima Univ.), Hirokazu Fukidome(Tohoku Univ.)

3:15 PM - 3:30 PM

[9p-Z29-8] Resistivity of graphene on SiC by water desorption

Tomoki Minami1, Syuta Oti1, Yasuhide Ohno1, Masao Nagase1 (1.Tokushima Univ.)

Keywords:graphene, gas sensor, water desorption

Water molecules are strongly adsorbed on SiC graphene and structural water layer is formed on the surface. In this study, we examined electrical properties of the desorption process by heating the structural water layer formed in graphene on SiC. Structural water layer and annealed sample state were raised to 300 ℃ from room temperature, it was measured sheet resistance. Structural water layer is formed by deionized water treatment. Thermal desorption process of the structural water layer was electrically measured.