17:30 〜 17:45 ▼ [14p-B401-15] Insulating Ga2O3 layer formation at SiO2/β-Ga2O3 interface during oxygen annealing at 1000℃ and its impact on Ga2O3 MOS interface characteristics 〇(M2)QIN MAO1、Koji KITA1 (1.Tokyo Univ.)