QIN MAO

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

5:30 PM - 5:45 PM

▼ [14p-B401-15] Insulating Ga₂O₃ layer formation at SiO₂/β-Ga₂O₃ interface during oxygen annealing at 1000℃ and its impact on Ga₂O₃ MOS interface characteristics

〇(M2)QIN MAO¹, Koji KITA¹ (1.Tokyo Univ.)