Niloy Chandra Saha

→ Search for Niloy Chandra Saha in Google Scholar

Speaker, Author, Co-Author

Thu. Mar 12, 2020 1:45 PM - 5:45 PM D419 (11-419)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM

▼ [12p-D419-15] High current (0.78 A/mm) and high voltage (618 V) operation of NO₂-doped diamond MOSFETs

〇(D)Niloy Chandra Saha¹, Y. Kawamata², K. Koyama², S. -W. Kim², T. Oishi¹, M. Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)