Satomu Furuta

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 9:00 AM - 12:00 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

9:45 AM - 10:00 AM

[14a-B401-4] Depth profiling of deep-level traps in GaN introduced by high-temperature thermal treatment with SiN cap layer

〇Satomu Furuta¹, Masahiro Horita^1,2, Nariaki Tanaka³, Tohru Oka³, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Toyoda Gosei)