Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[14a-B401-1~11] 13.7 Compound and power electron devices and process technology

Sat. Mar 14, 2020 9:00 AM - 12:00 PM B401 (2-401)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[14a-B401-1] Irradiation energy dependence of hole traps introduced by electron beam irradiation in homoepitaxial n-type GaN

〇Meguru Endo¹, Kazutaka Kanegae¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ.)

9:15 AM - 9:30 AM

[14a-B401-2] Effects of carbon impurities and nonradiative recombination centers for quantum efficiency of radiation in GaN crystals

〇Kazunobu Kojima¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Hajime Fujikura², Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Sciocs Co. Ltd.)

9:30 AM - 9:45 AM

[14a-B401-3] Open spaces and vacancies in SiO₂/GaN structure probed by means of positron annihilation

〇Akira Uedono¹, K Ueno¹, T. Hosoi², W. Egger³, T. Koschine³, C. Hugenschmidt⁴, M. Dickmann³, H. Watanabe² (1.Tsukuba Univ., 2.Osaka Univ., 3.UnivBwM, 4.TUM)

9:45 AM - 10:00 AM

[14a-B401-4] Depth profiling of deep-level traps in GaN introduced by high-temperature thermal treatment with SiN cap layer

〇Satomu Furuta¹, Masahiro Horita^1,2, Nariaki Tanaka³, Tohru Oka³, Jun Suda^1,2 (1.Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Toyoda Gosei)

10:00 AM - 10:15 AM

[14a-B401-5] Mg recoil implantation into GaN with incident Nitrogen ion(5)

〇Toshikazu Yamada¹, Hisashi Yamada¹, Tokio Takahashi², Mituaki Shimizu¹ (1.AIST GaN-OIL, 2.AIST ESPRIT)

10:15 AM - 10:30 AM

[14a-B401-6] Hall-effect measurements of Mg implanted GaN layers annealed at standard pressure

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Masaharu Edo¹, Masahiro Horita², Jun Suda² (1.Fuji Electric, 2.Nagoya Univ.)

10:45 AM - 11:00 AM

[14a-B401-7] Measurement of Two-Photon Induced Current in GaN Vertical p-n Diode

〇Seiya Kawasaki¹, Yuto Ando¹, Atsushi Tanaka^2,3, Mayuko Tsukagoshi⁴, Tomoyuki Tanikawa⁴, Manato Deki², Maki Kushimoto¹, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,5,6 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, 3.NIMS, 4.Osaka Univ, 5.Akasaki R.C., 6.VBL)

11:00 AM - 11:15 AM

[14a-B401-8] Observation of current decrease in tiny p-n junction diode on a threading dislocation

〇Hiroshi Ohta¹, Naomi Asai¹, Takehiro Yoshida², Fumimasa Horikiri², Yoshinobu Narita², Tomoyoshi Mishima¹ (1.Hosei Univ., 2.SCIOCS)

11:15 AM - 11:30 AM

[14a-B401-9] DLTS and MCTS study of n-GaN Schottky diodes fabricated after removal of gate oxide

〇Sayaka Harada¹, Kazuya Tamura², Towa Kojima², Yukito Furugori², Hikaru Yoshida², Yutaka Tokuda², Takashi Okawa¹, Hidemoto Tomita¹ (1.Toyota Motor Corp., 2.Aichi Inst. of Technol.)

11:30 AM - 11:45 AM

[14a-B401-10] Evaluation of GaN-MOSFET with different gate oxide deposition methods

〇Satoshi Ikeda¹, Takashi Okawa¹, Hidemoto Tomita¹, Atsushi Watanabe¹, Yutaka Tokuda² (1.Toyota Motor Corp., 2.Aichi Inst. of Technol.)

11:45 AM - 12:00 PM

[14a-B401-11] Investigation of activation anneal for selective p-GaN layer.

〇Kenta Watanabe¹, Hiroko Iguchi², Maito Shiraishi³, Taisei Miyazaki³, Ryusui Wada³, Masato Omori³, Takashi Okawa¹, Yoshitaka Nagasato¹ (1.Toyota Motor Corp., 2.Toyota Inst., 3.Oita Univ.)

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