14:15 〜 14:30 ▼ [12p-A202-5] Comparison of non-volatile memory characteristics for Hf-based MONOS diode with HfO2 and HfON tunneling layer 〇(D)Jooyoung Pyo1、Yusuke Horiuchi1、Shun-ichiro Ohmi1 (1.Tokyo Tech.)