Takashi Tsukasaki

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Speaker, Author, Co-Author

Thu. Mar 12, 2020 9:30 AM - 11:45 AM D215 (11-215)

Oral presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[12a-D215-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:45 AM - 10:00 AM

[12a-D215-2] Electron concentration in Si doped GaAsN as a function of annealing temperature

〇Takashi Tsukasaki¹, Naoki Mochida¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)