Yuto Ando

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 9:00 AM - 11:45 AM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[13a-B401-1~10] 13.7 Compound and power electron devices and process technology

10:00 AM - 10:15 AM

△ [13a-B401-5] Impacts of gate electrode formation process on interface properties of Al₂O₃/GaN gate stack structure

〇Yuto Ando^1,6, Tohru Nakamura², Manato Deki², Noriyuki Taoka¹, Hirotaka Watanabe², Atsushi Tanaka^2,3, Shugo Nitta², Yoshio Honda², Hisashi Yamada⁶, Mitsuaki Shimizu^2,6, Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.NIMS, 4.ARC, Nagoya Univ., 5.VBL, Nagoya Univ., 6.AIST GaN-OIL)