09:30 〜 11:30 ▲ [13a-PA6-6] Influence of Interface Traps on Split C-V Characteristics of 4H-SiC MOSFETs 〇(D)Gyozen Sai1、Dai Okamoto1、Noriyuki Iwamoro1、Hiroshi Yano1 (1.Univ. Tsukuba)