Maria Gouveia

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:15 PM - 5:30 PM

▲ [13p-D419-13] Effects of Polishing Damage on β-Ga₂O₃ Schottky Diodes Electrical Properties

〇(M1)Maria Gouveia^1,2, Aboulaye Traore^1,3, Hitoshi Umezawa³, Hideki Inaba³, Toshimitsu Ito³, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.Univ. of Grenoble-Alpes, 3.AIST)