Daiki Wakimoto

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM

[13p-D419-14] High breakdown voltage MOS capacitor fabricated on the β-Ga₂O₃ epitaxial layer with low donor concentration

〇Daiki Wakimoto¹, Kouhei Sasaki¹, Hironobu Miyamoto¹, Quang Tu Thieu¹, Akito Kuramata¹, Shigenobu Yamakosi¹ (1.Novel Crystal Technology)