Goki Ogane

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 1:30 PM - 3:30 PM PA5 (PA)

Poster presentation
| 15 Crystal Engineering
| 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[13p-PA5-1~14] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

1:30 PM - 3:30 PM

[13p-PA5-11] Reduction of Dislocation Using GaSb Buffer in Sb-Based HEMT on GaAs Substrate

〇Goki Ogane¹, Mizuho Hiraoka¹, Takuya Hayashi¹, Munemasa Kunisawa¹, Issei Watanabe^2,1, Yoshimi Yamashita², Shinsuke Hara², Ryuto Machida², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS, 2.NICT)

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