Kazuki Ohnishi

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[14p-A302-1~18] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM

△ [14p-A302-10] Halide vapor phase epitaxial growth of Mg-doped GaN layers using MgO

〇Kazuki Ohnishi¹, Yuki Amano¹, Naoki Fujimoto², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4 (1.Dept. of Elec., Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.ARC, Nagoya Univ., 4.VBL, Nagoya Univ.)

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