Naoki Yokoyama

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:45 PM - 6:45 PM A302 (6-302)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[14p-A302-1~18] 15.4 III-V-group nitride crystals

6:30 PM - 6:45 PM

[14p-A302-18] GaN Etching to Maintain Surface Flatness Required for Surface Activated Bonding

〇(B)Naoki Yokoyama¹, Ryo Tanabe¹, Takaya Morikawa¹, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)