Naoya Niikura

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Speaker, Author, Co-Author

Sat. Mar 14, 2020 1:30 PM - 6:15 PM B401 (2-401)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[14p-B401-1~17] 13.7 Compound and power electron devices and process technology

6:00 PM - 6:15 PM

△ [14p-B401-17] Vertical-type 2DHG Diamond MOSFET Realization of large current operation (-3.4 A) for power device applications

〇(B)Naoya Niikura¹, Masayuki Iwataki¹, Jun Nishimura¹, Kiyotaka Horikawa¹, Shotaro Amano¹, Atsushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1.Waseda Univ, 2.Zaiken)

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