Daichi Todo

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

11:15 AM - 11:30 AM

[15a-A201-8] Elucidation of Ohmic Contact Formation Mechanism of 4H-SiC with Silicon-Cap-Annealing

〇Daichi Todo¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)