Johji Nishio

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 9:00 AM - 11:30 AM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15a-A201-1~8] 15.6 Group IV Compound Semiconductors (SiC)

9:30 AM - 9:45 AM

[15a-A201-2] Partial dislocation analysis of single Shockley stacking faults expanded from different origins on 4H-SiC PiN diodes

〇Johji Nishio¹, Aoi Okada¹, Chiharu Ota¹, Ryosuke Iijima¹ (1.Toshiba Corp.)

Sun. Mar 15, 2020 9:00 AM - 12:00 PM D411 (11-411)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[15a-D411-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:30 AM - 11:45 AM

[15a-D411-10] Analysis of molten KOH etch-pits formed at basal plane dislocations on 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹, Aoi Okada¹, Ryosuke Iijima¹ (1.Toshiba Corp.)