Takuma Doi

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

3:30 PM - 3:45 PM

△ [15p-A201-10] Availability of Al₂O₃/4H-SiC structure formed by metal layer oxidation from viewpoint of interface flatness

〇Takuma Doi^1,2, Shigehisa Shibayama¹, Wakana Takeuchi^1,3, Mitsuo Sakashita¹, Noriyuki Taoka¹, Mitsuaki Shimizu², Osamu Nakatsuka¹ (1.Nagoya Univ., 2.AIST-NU GaN-OIL, 3.Aichi Inst. of Tech.)