Takuji Hosoi

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

4:15 PM - 4:30 PM

[15p-A201-13] High-temperature characteristics of 4H-SiC(0001) pMOSFET fabricated with ultrahigh temperature processes and its application to CMOS

Kidist Moges¹, 〇Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)