Munetaka Noguchi

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Speaker, Author, Co-Author

Sun. Mar 15, 2020 1:00 PM - 5:00 PM A201 (6-201)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[15p-A201-1~15] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM

[15p-A201-8] Temperature Dependence of Inversion Layer Mobility of the Si-face SiC MOSFET Fabricated on Low Acceptor Concentration P-type Well Region

〇Munetaka Noguchi¹, Toshiaki Iwamatsu¹, Hiroyuki Amishiro¹, Hiroshi Watanabe¹, Koji Kita², Naruhisa Miura¹ (1.Mitsubishi Electric Corp., 2.Univ. of Tokyo)

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