Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[13p-A302-1~10] 15.4 III-V-group nitride crystals

Fri. Mar 13, 2020 1:30 PM - 4:15 PM A302 (6-302)

Motoaki Iwaya(Meijo Univ.), Toshiki Hikosaka(Toshiba Corp.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[13p-A302-1] [Young Scientist Presentation Award Speech] First-Principles Electronic Structure Analysis in GaN with Screw Dislocation and Mg Impurity Complex

〇Takashi Nakano¹, Yosuke Harashima², Kenta Chokawa², Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Akira Kusaba³, Yoshihiro Kangawa^4,2, Atsushi Tanaka², Yoshio Honda^2,1, Hiroshi Amano^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Computer Centre, Gakushuin Univ., 4.RIAM, Kyushu Univ.)

1:45 PM - 2:00 PM

△ [13p-A302-2] Electoronic Structure Analysis of a Complex of Screw Dislocation, Mg and H Impurities in GaN

〇Naoki Inoue¹, Takashi Nakano², Yosuke Harashima³, Masaaki Araidai^3,2, Kenji Shiraishi^3,2, Atsushi Oshiyama³ (1.Nagoya Univ., 2.Graduate School of Eng,Nagoya Univ., 3.IMASS,Nagoya Univ.)

2:00 PM - 2:15 PM

[13p-A302-3] 1-D hopping conduction model for the leakage current on the threading dislocation in p-n diodes

〇Yosuke Harashima¹, Takashi Nakano², Atsushi Oshiyama¹, Kenji Shiraishi^1,2 (1.IMaSS, Nagoya Univ., 2.Grad. Sch. Engineering, Nagoya Univ.)

2:15 PM - 2:30 PM

△ [13p-A302-4] Investigation of morphology and current leakage properties for individual threading dislocations in a HVPE-GaN bulk single crystal grown on a Na-flux-GaN crystal

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Masayuki Imanishi², Yusuke Mori², Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ.)

2:30 PM - 2:45 PM

▲ [13p-A302-5] Cathodoluminescence and Atom Probe Study of Mg Diffusion and Activation along Threading Dislocations in Mg Implanted Homoepitaxial GaN

〇(PC)Wei Yi¹, Ashutosh Kumar¹, Jun Uzuhashi¹, Jun Chen¹, Takashi Kimura¹, Ryo Tanaka², Shinya Takashima², Masaharu Edo², Yongzhao Yao³, Yukari Ishikawa³, Tadakatsu Ohkubo¹, Takashi Sekiguchi¹, Kazuhiro Hono¹ (1.NIMS, 2.Fuji Electric, 3.JFCC)

3:00 PM - 3:15 PM

△ [13p-A302-6] Categorization and structure analysis of pits generated during GaN growth on Si substrates

〇Kazuya Okamoto¹, Takumi Soga², Momoko Deura¹, Takashi Yoda^3,5, Hideshi Takahashi³, Yasushi Iyechika³, Kiyotaka Miyano³, Masayuki Tsukui³, Takeshi Momose¹, Masakazu Sugiyama⁴, Yukihiro Shimogaki¹ (1.School Eng., Univ. Tokyo, 2.Faculty Eng., Univ. Tokyo, 3.Nuflare Technology, 4.RCAST, Univ. Tokyo, 5.FIRST, Tokyo Tech.)

3:15 PM - 3:30 PM

[13p-A302-7] Local structural analysis of a single Ga_1-xIn_xN/GaN quantum shell by using an X-ray micro-beam from the large synchrotron radiation facility of SPring-8.

〇(M1)Takato Ichikawa¹, Tsurugi Kondo¹, Nobuhiro Yasuda², Yasuhiko Imai², Tomoyo Nakao³, Shigeo Arai³, Nanami Goto¹, Satoshi Kamiyama¹, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.Japan Synchrotron Radiation Research Inst., 3.IMaSS., Nagoya Univ.)

3:30 PM - 3:45 PM

[13p-A302-8] Fabrication of piezoelectric GaN cantilever using carbon doped GaN semi-insulating layer

〇Takehiro Yamada¹, Yuto Ando¹, Hirotaka Watanabe², Yuta Furusawa², Manato Deki², Atushi Tanaka^2,3, Shugo Nitta², Yoshio Honda², Jun Suda^1,2, Hiroshi Amano^2,3,4,5 (1.Nagoya Univ, 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

3:45 PM - 4:00 PM

▲ [13p-A302-9] Analysis of Transmetalation between TMI and Metallic Ga during AlInN Growth by High-Resolution Mass Spectrometry

〇(M1)Donglin Wu¹, Zheng Ye¹, Shugo Nitta², Yoshio Honda², Markus Pristovsek², Hiroshi Amano^2,3,4,5 (1.Dept. of Electronics, Nagoya Univ, 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

4:00 PM - 4:15 PM

▲ [13p-A302-10] First-principle study of structures and energetics of atomic steps on GaN(0001) surface

〇(P)ThiKieuMy Bui¹, Kenji Shiraishi^1,2, Atsushi Oshiyama¹ (1.IMaSS, Nagoya Univ., 2.Grad. School of Engineering, Nagoya Univ.)

Session information

[13p-A302-1~10] 15.4 III-V-group nitride crystals

[13p-A302-1] [Young Scientist Presentation Award Speech] First-Principles Electronic Structure Analysis in GaN with Screw Dislocation and Mg Impurity Complex

△ [13p-A302-2] Electoronic Structure Analysis of a Complex of Screw Dislocation, Mg and H Impurities in GaN

[13p-A302-3] 1-D hopping conduction model for the leakage current on the threading dislocation in p-n diodes

△ [13p-A302-4] Investigation of morphology and current leakage properties for individual threading dislocations in a HVPE-GaN bulk single crystal grown on a Na-flux-GaN crystal

▲ [13p-A302-5] Cathodoluminescence and Atom Probe Study of Mg Diffusion and Activation along Threading Dislocations in Mg Implanted Homoepitaxial GaN

△ [13p-A302-6] Categorization and structure analysis of pits generated during GaN growth on Si substrates

[13p-A302-7] Local structural analysis of a single Ga_1-xIn_xN/GaN quantum shell by using an X-ray micro-beam from the large synchrotron radiation facility of SPring-8.

[13p-A302-8] Fabrication of piezoelectric GaN cantilever using carbon doped GaN semi-insulating layer

▲ [13p-A302-9] Analysis of Transmetalation between TMI and Metallic Ga during AlInN Growth by High-Resolution Mass Spectrometry

▲ [13p-A302-10] First-principle study of structures and energetics of atomic steps on GaN(0001) surface

Authentication

Session information

[13p-A302-1~10] 15.4 III-V-group nitride crystals

[13p-A302-1] [Young Scientist Presentation Award Speech] First-Principles Electronic Structure Analysis in GaN with Screw Dislocation and Mg Impurity Complex

△ [13p-A302-2] Electoronic Structure Analysis of a Complex of Screw Dislocation, Mg and H Impurities in GaN

[13p-A302-3] 1-D hopping conduction model for the leakage current on the threading dislocation in p-n diodes

△ [13p-A302-4] Investigation of morphology and current leakage properties for individual threading dislocations in a HVPE-GaN bulk single crystal grown on a Na-flux-GaN crystal

▲ [13p-A302-5] Cathodoluminescence and Atom Probe Study of Mg Diffusion and Activation along Threading Dislocations in Mg Implanted Homoepitaxial GaN

△ [13p-A302-6] Categorization and structure analysis of pits generated during GaN growth on Si substrates

[13p-A302-7] Local structural analysis of a single Ga1-xInxN/GaN quantum shell by using an X-ray micro-beam from the large synchrotron radiation facility of SPring-8.

[13p-A302-8] Fabrication of piezoelectric GaN cantilever using carbon doped GaN semi-insulating layer

▲ [13p-A302-9] Analysis of Transmetalation between TMI and Metallic Ga during AlInN Growth by High-Resolution Mass Spectrometry

▲ [13p-A302-10] First-principle study of structures and energetics of atomic steps on GaN(0001) surface

Authentication

[13p-A302-7] Local structural analysis of a single Ga_1-xIn_xN/GaN quantum shell by using an X-ray micro-beam from the large synchrotron radiation facility of SPring-8.