Oral presentation

Code-sharing Session » 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

Sat. Mar 14, 2020 1:45 PM - 5:30 PM A303 (6-303)

Norifumi Fujimura(Osaka Pref. Univ.), Eisuke Tokumitsu(JAIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

[14p-A303-1] HZO thin film grown by mist chemical vapor deposition and evaluation of their electrical characteristics

〇(B)Yuki Fujiwara¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹, Minoru Noda¹ (1.Kyoto Inst. Tech.)

2:00 PM - 2:15 PM

△ [14p-A303-2] Characteristics of the Multi-Coated Hf_0.5Zr_0.5O₂ Films by a Chemical Solution Deposition Method

〇(M1)Hiroshi Ota¹, Taichi Inoue¹, Yuichi Hirofuji¹, Kazuto Koike¹, Mitsuaki Yano¹ (1.Osaka Inst. of Tech.,NMRC)

2:15 PM - 2:30 PM

△ [14p-A303-3] Investigation of the stabilization of the orthorhombic phase using epitaxial HfO₂ based films

〇(D)Takanori Mimura¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo. Tech.)

2:30 PM - 2:45 PM

▼ [14p-A303-4] Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process

〇(D)Mohit Mohit¹, Jyotish Patidar¹, Ken-Ichi Haga¹, Eisuke Tokumitsu¹ (1.School of Materials Science, JAIST)

2:45 PM - 3:00 PM

△ [14p-A303-5] Preparation of HfO₂-based ferroelectric thick film by the sputtering method at room temperature and its electrical properties

〇(PC)Reijiro Shimura¹, Takanori Mimura¹, Akinori Tateyama¹, Takao Shimizu¹, Hiroshi Funakubo¹ (1.Tokyo Tech. SMCT)

3:00 PM - 3:15 PM

△ [14p-A303-6] Improvement of MFSFET characteristics with ferroelectric non-doped HfO₂ utilizing Hf interfacial layer

〇(M2)Masakazu Kataoka¹, Masaki Hayashi¹, Min Gee Kim¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

3:15 PM - 3:30 PM

[14p-A303-7] Observation of (Hf,Zr)O₂ thin films by scanning nonlinear dielectric microscopy

〇Hironori Fujisawa¹, Seiji Nakashima¹, Shinji Migita² (1.Univ. Hyogo, 2.AIST)

3:45 PM - 4:00 PM

△ [14p-A303-8] Abnormal ferroelectric phase formation mechanism of ZrO₂ thin film by wet annealing

〇Shigehisa Shibayama¹, Jotaro Nagano², Mitsuo Sakashita¹, Osamu Nakatsuka^1,3 (1.Nagoya Univ., 2.Sch. of Eng., Nagoya Univ., 3.IMaSS, Nagoya Univ.)

4:00 PM - 4:15 PM

[14p-A303-9] Endurance property of low-temperature (300 °C)-fabricated ferroelectric Hf_xZr₁_−xO₂ thin films using plasma-enhanced atomic layer deposition

〇Takashi Onaya^1,2,3,4, Toshihide Nabatame³, Yongchan Jung², Hernandez-Arriaga Heber², Jaidah Mohan², Harrison S. Kim², Ava Khosravi², Naomi Sawamoto¹, Takahiro Nagata³, Robert M. Wallace², Jiyoung Kim², Atsushi Ogura¹ (1.Meiji Univ., 2.UT Dallas, 3.NIMS, 4.JSPS Research Fellow DC)

4:15 PM - 4:30 PM

▲ [14p-A303-10] Improvement of ferroelectric properties of TiN/Hf_0.5Zr_0.5O₂/Si gate stacks by inserting Al₂O₃ interfacial layers

〇Zaoyang Lin¹, Tsung-En Lee¹, Hanzhi Tang¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.The Univ. of Tokyo)

4:30 PM - 4:45 PM

▼ [14p-A303-11] Consideration of Charge Injection Effect on the Degradation of Ferroelectric HfO₂during
Bipolar Voltage Cycling

〇(DC)Siri Nittayakasetwat¹, Koji Kita¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM

[14p-A303-12] Evaluation of Charge Distribution at MOS Interface Toward Deep Understanding of Device Operation of Ferroelectric FETs

〇Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

5:00 PM - 5:15 PM

[14p-A303-13] Study on device design of a ferroelectric tunnel junction for large-scale integration

〇Hidemasa Yoshimura¹, Fei Mo¹, Toshiro Hiramoto¹, Masaharu Kobayashi^1,2 (1.IIS, Univ. of Tokyo, 2.d.lab Univ. of Tokyo)

5:15 PM - 5:30 PM

[14p-A303-14] Potential and challenges of HfO₂FeRAM for low-voltage operation

〇Shinji Migita¹, Hiroyuki Ota¹, Yukinori Morita¹ (1.AIST)

Session information

[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-1] HZO thin film grown by mist chemical vapor deposition and evaluation of their electrical characteristics

△ [14p-A303-2] Characteristics of the Multi-Coated Hf_0.5Zr_0.5O₂ Films by a Chemical Solution Deposition Method

△ [14p-A303-3] Investigation of the stabilization of the orthorhombic phase using epitaxial HfO₂ based films

▼ [14p-A303-4] Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process

△ [14p-A303-5] Preparation of HfO₂-based ferroelectric thick film by the sputtering method at room temperature and its electrical properties

△ [14p-A303-6] Improvement of MFSFET characteristics with ferroelectric non-doped HfO₂ utilizing Hf interfacial layer

[14p-A303-7] Observation of (Hf,Zr)O₂ thin films by scanning nonlinear dielectric microscopy

△ [14p-A303-8] Abnormal ferroelectric phase formation mechanism of ZrO₂ thin film by wet annealing

[14p-A303-9] Endurance property of low-temperature (300 °C)-fabricated ferroelectric Hf_xZr₁_−xO₂ thin films using plasma-enhanced atomic layer deposition

▲ [14p-A303-10] Improvement of ferroelectric properties of TiN/Hf_0.5Zr_0.5O₂/Si gate stacks by inserting Al₂O₃ interfacial layers

▼ [14p-A303-11] Consideration of Charge Injection Effect on the Degradation of Ferroelectric HfO₂during
Bipolar Voltage Cycling

[14p-A303-12] Evaluation of Charge Distribution at MOS Interface Toward Deep Understanding of Device Operation of Ferroelectric FETs

[14p-A303-13] Study on device design of a ferroelectric tunnel junction for large-scale integration

[14p-A303-14] Potential and challenges of HfO₂FeRAM for low-voltage operation

Authentication

Session information

[14p-A303-1~14] 【CS.4】 Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-A303-1] HZO thin film grown by mist chemical vapor deposition and evaluation of their electrical characteristics

△ [14p-A303-2] Characteristics of the Multi-Coated Hf0.5Zr0.5O2 Films by a Chemical Solution Deposition Method

△ [14p-A303-3] Investigation of the stabilization of the orthorhombic phase using epitaxial HfO2 based films

▼ [14p-A303-4] Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process

△ [14p-A303-5] Preparation of HfO2-based ferroelectric thick film by the sputtering method at room temperature and its electrical properties

△ [14p-A303-6] Improvement of MFSFET characteristics with ferroelectric non-doped HfO2 utilizing Hf interfacial layer

[14p-A303-7] Observation of (Hf,Zr)O2 thin films by scanning nonlinear dielectric microscopy

△ [14p-A303-8] Abnormal ferroelectric phase formation mechanism of ZrO2 thin film by wet annealing

[14p-A303-9] Endurance property of low-temperature (300 °C)-fabricated ferroelectric HfxZr1−xO2 thin films using plasma-enhanced atomic layer deposition

▲ [14p-A303-10] Improvement of ferroelectric properties of TiN/Hf0.5Zr0.5O2/Si gate stacks by inserting Al2O3 interfacial layers

▼ [14p-A303-11] Consideration of Charge Injection Effect on the Degradation of Ferroelectric HfO2 duringBipolar Voltage Cycling

[14p-A303-12] Evaluation of Charge Distribution at MOS Interface Toward Deep Understanding of Device Operation of Ferroelectric FETs

[14p-A303-13] Study on device design of a ferroelectric tunnel junction for large-scale integration

[14p-A303-14] Potential and challenges of HfO2FeRAM for low-voltage operation

Authentication

△ [14p-A303-2] Characteristics of the Multi-Coated Hf_0.5Zr_0.5O₂ Films by a Chemical Solution Deposition Method

△ [14p-A303-3] Investigation of the stabilization of the orthorhombic phase using epitaxial HfO₂ based films

△ [14p-A303-5] Preparation of HfO₂-based ferroelectric thick film by the sputtering method at room temperature and its electrical properties

△ [14p-A303-6] Improvement of MFSFET characteristics with ferroelectric non-doped HfO₂ utilizing Hf interfacial layer

[14p-A303-7] Observation of (Hf,Zr)O₂ thin films by scanning nonlinear dielectric microscopy

△ [14p-A303-8] Abnormal ferroelectric phase formation mechanism of ZrO₂ thin film by wet annealing

[14p-A303-9] Endurance property of low-temperature (300 °C)-fabricated ferroelectric Hf_xZr₁_−xO₂ thin films using plasma-enhanced atomic layer deposition

▲ [14p-A303-10] Improvement of ferroelectric properties of TiN/Hf_0.5Zr_0.5O₂/Si gate stacks by inserting Al₂O₃ interfacial layers

▼ [14p-A303-11] Consideration of Charge Injection Effect on the Degradation of Ferroelectric HfO₂during
Bipolar Voltage Cycling

[14p-A303-14] Potential and challenges of HfO₂FeRAM for low-voltage operation