Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[15a-A404-1~11] 17.3 Layered materials

Sun. Mar 15, 2020 9:00 AM - 11:45 AM A404 (6-404)

Keiji Ueno(Saitama Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[15a-A404-1] Growth and Transfer of Heteronanotubes Composed of Carbon, Boron Nitride and Molybdenum Disulfide

〇Taikou Murakami¹, Satoru Matsushita¹, Hayato Arai¹, Yongjia Zheng¹, Yang Qian¹, Taiki Inoue¹, Rong Xiang¹, Shohei Chiashi¹, Shigeo Maruyama^1,2 (1.Univ. of Tokyo, 2.AIST)

9:15 AM - 9:30 AM

[15a-A404-2] Growth of two-dimensional superlattices with Cold-walled Metal-Organic CVD

〇Satoshi Iida¹, Takato Hotta¹, Nanami Ichinose¹, Kenji Watanabe², Takashi Taniguchi², Zheng Liu³, Ryo Kitaura¹ (1.Nagoya Univ, 2.NIMS, 3.AIST)

9:30 AM - 9:45 AM

▲ [15a-A404-3] Nucleation and Growth of MoS₂ Crystals on GaN and 4H-SiC Substates Using Ammonium Tetrathiomolybdate Precursor

〇(D)Pradeep Niwas Desai¹, Ajinkya K. Ranade¹, Bhagyashri Todankar¹, Rakesh D. Mahyavanshi¹, Masashi Kato¹, Masaki Tanemura¹, Golap Kalita¹ (1.Nagoya Inst. of Tech.)

9:45 AM - 10:00 AM

▲ [15a-A404-4] Control growth of various polygonal-shaped h-BN single crystals

〇(P)Kamal Prasad Sharma¹, Aliza Khaniya Sharma¹, Takahiro Maruyama¹ (1.Meijo Univ.)

10:00 AM - 10:15 AM

[15a-A404-5] Epitaxial growth of SnS thin films by RF magnetron sputtering and consideration of their electrical properties

〇Kota Takisawa¹, Joonam Kim^1,2, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci., 2.RIST)

10:15 AM - 10:30 AM

▼ [15a-A404-6] PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps

〇(D)YihRen Chang¹, Hayami Kawamoto¹, Naoki Higashitarumizu¹, Tomonori Nishimura¹, Kosuke Nagashio¹ (1.UTokyo)

10:30 AM - 10:45 AM

△ [15a-A404-7] MBE growth of layered group-3 monochalcogenide thin films with non-prismatic monolayer structure

〇Takahiro Yonezawa¹, Tatsuya Murakami¹, Koichi Higashimine¹, Tongmin Chen¹, Hirokazu Nitta¹, Raiya Kuze¹, Antoine Fleurence¹, Yoshifumi Oshima¹, Yukiko Yamada-Takamura¹ (1.JAIST)

10:45 AM - 11:00 AM

△ [15a-A404-8] MoS₂ lateral p-n homojunction by substitutional doping

〇Mitsuhiro OKADA¹, Toshifumi Irisawa¹, Naoya Okada¹, Wen-Hsin Chang¹, Tetsuo Shimizu¹, Toshitaka Kubo¹ (1.AIST)

11:00 AM - 11:15 AM

[15a-A404-9] Deposition of ZrS₂ by MOCVD using Zr[N(C₂H₅)CH₃]₄ and [(t-C₄H₉)₂S₂] as precursors

〇Kota Yamazaki¹, Yusuke Hibino^1,4, Yuya Oyanagi¹, Yusuke Hashimoto¹, Naomi Sawamoto¹, Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudo³, Hitoshi Wakabayashi², Atushi Ogura¹ (1.Meiji Univ., 2.Tokyo Tech., 3.Gas-phase Growth Ltd., 4.JSPS Research Fellow)

11:15 AM - 11:30 AM

△ [15a-A404-10] The Band Structure Evaluation of MoS_2(1-x)Te_2x

〇Yusuke Hibino^1,2, Kota Yamazaki¹, Yusuke Hashimoto¹, Yuya Oyanagi¹, Naomi Sawamoto¹, Hideaki Machida³, Masato Ishikawa³, Hiroshi Sudoh³, Hitoshi Wakabayashi⁴, Atsushi Ogura¹ (1.Meiji Univ., 2.JSPS Research Fellow, 3.Gas Phase Growth Ltd., 4.Tokyo Tech.)

11:30 AM - 11:45 AM

△ [15a-A404-11] Carrier distribution imaging of mechanically exfoliated WSe₂/SiO₂ and suspended WSe₂using scanning nonlinear dielectric microscopy

〇Koki Takano¹, Kohei Yamasue¹, Toshiaki Kato², Toshiro Kaneko², Yasuo Cho¹ (1.RIEC, Tohoku Univ., 2.Tohoku Univ.)

Session information

[15a-A404-1~11] 17.3 Layered materials

[15a-A404-1] Growth and Transfer of Heteronanotubes Composed of Carbon, Boron Nitride and Molybdenum Disulfide

[15a-A404-2] Growth of two-dimensional superlattices with Cold-walled Metal-Organic CVD

▲ [15a-A404-3] Nucleation and Growth of MoS₂ Crystals on GaN and 4H-SiC Substates Using Ammonium Tetrathiomolybdate Precursor

▲ [15a-A404-4] Control growth of various polygonal-shaped h-BN single crystals

[15a-A404-5] Epitaxial growth of SnS thin films by RF magnetron sputtering and consideration of their electrical properties

▼ [15a-A404-6] PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps

△ [15a-A404-7] MBE growth of layered group-3 monochalcogenide thin films with non-prismatic monolayer structure

△ [15a-A404-8] MoS₂ lateral p-n homojunction by substitutional doping

[15a-A404-9] Deposition of ZrS₂ by MOCVD using Zr[N(C₂H₅)CH₃]₄ and [(t-C₄H₉)₂S₂] as precursors

△ [15a-A404-10] The Band Structure Evaluation of MoS_2(1-x)Te_2x

△ [15a-A404-11] Carrier distribution imaging of mechanically exfoliated WSe₂/SiO₂ and suspended WSe₂using scanning nonlinear dielectric microscopy

Authentication

Session information

[15a-A404-1~11] 17.3 Layered materials

[15a-A404-1] Growth and Transfer of Heteronanotubes Composed of Carbon, Boron Nitride and Molybdenum Disulfide

[15a-A404-2] Growth of two-dimensional superlattices with Cold-walled Metal-Organic CVD

▲ [15a-A404-3] Nucleation and Growth of MoS2 Crystals on GaN and 4H-SiC Substates Using Ammonium Tetrathiomolybdate Precursor

▲ [15a-A404-4] Control growth of various polygonal-shaped h-BN single crystals

[15a-A404-5] Epitaxial growth of SnS thin films by RF magnetron sputtering and consideration of their electrical properties

▼ [15a-A404-6] PVD growth of AA stacking SnS through screw dislocation induced by substrate edge steps

△ [15a-A404-7] MBE growth of layered group-3 monochalcogenide thin films with non-prismatic monolayer structure

△ [15a-A404-8] MoS2 lateral p-n homojunction by substitutional doping

[15a-A404-9] Deposition of ZrS2 by MOCVD using Zr[N(C2H5)CH3]4 and [(t-C4H9)2S2] as precursors

△ [15a-A404-10] The Band Structure Evaluation of MoS2(1-x)Te2x

△ [15a-A404-11] Carrier distribution imaging of mechanically exfoliated WSe2/SiO2 and suspended WSe2 using scanning nonlinear dielectric microscopy

Authentication

▲ [15a-A404-3] Nucleation and Growth of MoS₂ Crystals on GaN and 4H-SiC Substates Using Ammonium Tetrathiomolybdate Precursor

△ [15a-A404-8] MoS₂ lateral p-n homojunction by substitutional doping

[15a-A404-9] Deposition of ZrS₂ by MOCVD using Zr[N(C₂H₅)CH₃]₄ and [(t-C₄H₉)₂S₂] as precursors

△ [15a-A404-10] The Band Structure Evaluation of MoS_2(1-x)Te_2x

△ [15a-A404-11] Carrier distribution imaging of mechanically exfoliated WSe₂/SiO₂ and suspended WSe₂using scanning nonlinear dielectric microscopy