[12a-A201-1~8] 15.1 Bulk crystal growth

[12a-A201-2] Crystal growth of φ6inch Ni single crystal by resistance heating CZ method

〇Kazuya Takahashi¹, Tsuguo Fukuda¹, Takashi Fujii^1,2, Toru Kawamata³, Kazumasa Sugiyama³, Shigeya Naritsuka⁴ (1.Fukuda Crystal Lab., 2.Katsura Opt., 3.IMR, Tohoku Univ., 4.Meijyo Univ.)

Keywords:Ni crystal, metal single crystal, crystal growth

Ni single crystal has attracted attention for GaN epitaxial layers and graphene substrates.φ6inch Ni single crystal required for GaN power device substrate was grown by resistance heating CZ method, and 6inch wafer for epitaxial growth was processed.Comparison of crystal quality between resistance heating method and induction heating method was discussed.