The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.1 Bulk crystal growth

[12a-A201-1~8] 15.1 Bulk crystal growth

Thu. Mar 12, 2020 10:00 AM - 12:15 PM A201 (6-201)

Yuui Yokota(Tohoku Univ.), Toshinori Taishi(Shinshu Univ.)

11:15 AM - 11:30 AM

[12a-A201-5] Partitioning of Cr ion during growth of Cr:LiNbO3 under a strong interface electric field

Satoshi Uda1, Keiya Sato1 (1.IMR, Tohoku Univ.)

Keywords:LiNbO3, solute partitioning, interface electric field

An interface electric field influences the partitioning of ionic species in the oxide melt during growth. Partitioning of Cr during growth of Cr:LiNbO3 via a µ-PD method was observed under a large temperature gradient near the interface. A large temperature gradient arouses the Seebeck-effect-driven electric field. Cr ions were driven away from the interface due to the interface electric field whose effect on the transportation of Cr ion was larger than the moving interface velocity. However, Cr ions were observed to enter the crystal. This is probably because the large negative potential field with an atomic scale was present in the melt near the interface to conserve the electron flux density at the interface, which adsorbed Cr ions and they may have entered into the crystal with the progress of growth.