2020年第67回応用物理学会春季学術講演会

講演情報

一般セッション(口頭講演)

15 結晶工学 » 15.1 バルク結晶成長

[12a-A201-1~8] 15.1 バルク結晶成長

2020年3月12日(木) 10:00 〜 12:15 A201 (6-201)

横田 有為(東北大)、太子 敏則(信州大)

11:30 〜 11:45

[12a-A201-6] Unsteady-state crystal growth in the presence of interface electric field

〇(D)Qilin Shi1、Jun Nozawa1、Satoshi Uda1 (1.Tohoku Univ.)

キーワード:true congruent LiNbO3, interface electric field, unsteady-state crystal growth

Doping a certain amount of MgO to the LN enables it to be stoichiometric and congruent simultaneously (denoted as cs-MgO:LN, Li2O:Nb2O5:MgO=45.3:50.0:4.7mol%). According to our thermodynamic analysis on partitioning of ionic species, it is expected that no segregation of any ionic species takes place during steady-state growth of the cs-MgO:LN. Since the equilibrium partitioning coefficient, k0, is unity for all constituent species including ionic species. Based on the understanding of partitioning of ionic species in cs-MgO:LN, we expect that for the unsteady-state growth, Mg concentration changes in the presence of interface electric field while there is no segregation with zero interface electric field.