The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12a-A302-1~12] 15.4 III-V-group nitride crystals

Thu. Mar 12, 2020 9:00 AM - 12:15 PM A302 (6-302)

Atsushi Kobayashi(Univ. of Tokyo), Tomoyuki Tanikawa(Osaka Univ.)

11:00 AM - 11:15 AM

[12a-A302-8] Lattice curvature improvement and separation of GaN film on sapphire substrate
by using thermal decomposition of InGaN layer

Takushi Kaneko1, Koichiro Yuki1, Narihito Okada1, Kazuyuki Tadatomo1 (1.Grad. School of Sci. &Tech. for innovation, Yamaguchi Univ.)

Keywords:GaN, lattice curvature, separation