[12a-A302-1~12] 15.4 III-V-group nitride crystals

[12a-A302-8] Lattice curvature improvement and separation of GaN film on sapphire substrate
by using thermal decomposition of InGaN layer

〇Takushi Kaneko¹, Koichiro Yuki¹, Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. &Tech. for innovation, Yamaguchi Univ.)

Keywords:GaN, lattice curvature, separation