[12a-A409-1~9] 12.4 Organic light-emitting devices and organic transistors

[12a-A409-4] Highly Efficient NIR Luminescence of Yb³⁺ doped Perovskite Thin Films for LED Applications

〇Ayumi Ishii^1,2, Tsutomu Miyasaka¹ (1.Toin Univ. of Yokohama, 2.JST PRESTO)

Keywords:Near-infrared luminescence, perovskite, LED

In this report, a highly efficient NIR LED is demonstrated, which is based on an energy transfer from wide bandgap all inorganic perovskite (CsPbCl₃) to ytterbium ions (Yb³⁺) as an NIR emitter doped in the perovskite crystalline film. High mobility of electrically excited carriers in the perovskite crystalline film provides a long carrier diffusion and enhances radiative recombination of an emission center due to minimized charge trapping losses, resulting in high EQE value in LEDs. The NIR emission of Yb³⁺ at around 1000 nm is found to be sensitized by CsPbCl₃ thin film with a photoluminescence quantum yield over 60%. The LED based on Yb³⁺-doped CsPbCl₃ film exhibits a high EQE of 5.9% with a peak wavelength of 984 nm, achieved by high carrier transporting ability and effective sensitized emission property in the solid-film structure.