[12a-D215-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [12a-D215-4] Theoretical Investigation on Phosphorus-Vacancy-Mediated Annihilation of Nitrogen Related Point Defects in GaPN Alloy

〇Yuito Maki¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Tech.)

Keywords:III-V-N alloy, point defect, First-Principles Calculation

III-V-N alloy is a promising material for tandem solar cell, but its device characteristics dramatically deteriorates due to nitrogen-related point defects. To annihilate such defects, we theoretically investigated its annihilation mechanism using first-principles calculations and conducted defect-suppression experiments through proton irradiation. The results so far suggest the probability of annihilating point defects mediated by phosphorus vacancy. In this research, we made a theoretical analysis on phosphorus vacancy in GaPN crystals. The results confirmed that phosphorus vacancy plays an important role in point defects annihilation mechanism.