The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 9:00 AM - 12:15 PM D419 (11-419)

Kosaku Shimizu(Nihon Univ.), Keisuke Ide(Tokyo Tech)

11:00 AM - 11:15 AM

[12a-D419-8] Thin film transistor using hydrogen-doped a-Ga-O

Akihiro Kato1, Yurika Kasai1, Keisuke Ide1, Takayoshi Katase1, Hidenori Hiramatsu1,2, Hideo Hosono1,2, Toshio Kamiya1,2 (1.MSL, Tokyo Tech, 2.MCES, Tokyo Tech.)

Keywords:Amorphous oxide semiconductor, Field effect transistor, Hydrogen doping