Oral presentation

[12a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 9:00 AM - 12:15 PM D419 (11-419)

Kosaku Shimizu(Nihon Univ.), Keisuke Ide(Tokyo Tech)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-D419-1] High-sensitivity detecting of K and Na ion concentrations using a-InGaZnO TFT

〇Kazushige Takechi¹, Shinnosuke Iwamatsu², Yutaka Murakami², Hiroshi Tanabe¹, Yoshiyuki Watanabe² (1.Tianma Japan, 2.Yamagata Res. Inst. Technol.)

9:15 AM - 9:30 AM

[12a-D419-2] [Highlight]Electronic structure of interstitial hydrogen in wide gap semi-conductor InGaZnO₄

〇Masatoshi Hiraishi¹, Kenji Kojima², Hirotaka Okabe¹, Akihiro Koda^1,3, Ryosuke Kadono^1,3, Keisuke Ide⁴, Satoru Matsuishi⁵, Hideya Kumomi⁵, Toshio Kamiya^4,5, Hideo Hosono^4,5 (1.KEK-IMSS, 2.TRIUMF, 3.Sokendai, 4.Tokyo Tech MSL, 5.MCES)

9:30 AM - 9:45 AM

[12a-D419-3] Hydrogenation or Oxidization to In-Sn-Zn-O TFTs and the Evaluation of the Reliability

〇Kousaku Shimizu¹ (1.Nihon Univ.)

9:45 AM - 10:00 AM

[12a-D419-4] [Young Scientist Presentation Award Speech] Development of highly reliable and stable chemical sensors based on extended-gate type amorphous oxide semiconductor thin-film transistor

〇Yuki Hashima¹, Takanori Takahashi¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST)

10:00 AM - 10:15 AM

[12a-D419-5] Low temperature fabrication of high mobility hydrogenated InGaZnOx thin film transistors

〇Mamoru Furuta¹, Marin Mori¹, Syuhei Hamada¹, Shuya Kono¹, Daichi Koretomo¹, Yusaku Magari¹ (1.Kochi Univ. of Tech.)

10:15 AM - 10:30 AM

[12a-D419-6] Low temperature fabrication of high mobility hydrogenated InGaZnOx thin film transistors-II

〇(M2)Shuhei Hamada¹, Daichi Koretomo¹, Yusaku Magari¹, Mamoru Furuta¹ (1.Kochi Univ. of Tech.)

10:45 AM - 11:00 AM

[12a-D419-7] Direct Photo-patterning Process for Solution-processed Metal Oxide TFT

〇Masashi Miyakawa¹, Mitsuru Nakata¹, Hiroshi Tsuji¹, Yoshiki Nakajima¹ (1.NHK STRL)

11:00 AM - 11:15 AM

△ [12a-D419-8] Thin film transistor using hydrogen-doped a-Ga-O

〇Akihiro Kato¹, Yurika Kasai¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL, Tokyo Tech, 2.MCES, Tokyo Tech.)

11:15 AM - 11:30 AM

△ [12a-D419-9] Reliability of an amorphous carbon-doped In₂O₃ thin-film transistors under negative and positive bias stress

〇Riku Kobayashi^1,2, Toshihide Nabatame², Kazunori Kurishima^1,2,3, Takashi Onaya^1,2,4, Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Kazuhito Tsukagoshi², Atsushi Ogura¹ (1.Meiji Univ., 2.WPI-MANA, NIMS, 3.JSPS Research Fellow PD, 4.JSPS Research Fellow DC)

11:30 AM - 11:45 AM

▼ [12a-D419-10] Electric Field Thermopower Modulation Analyses of the Operation Mechanism of Amorphous SnO₂ Thin Film Transistor

〇(D)Doudou Liang^1,2, Yuqiao Zhang¹, Hai Jun Cho¹, Hiromichi Ohta¹ (1.RIES-Hokkaido Univ., 2.USTB)

11:45 AM - 12:00 PM

▼ [12a-D419-11] Development of thin film transistor using an amorphous mixed-anion semiconductor a-ZnOS

〇(M2)Zhen Chen¹, Yasushi Hirose¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

12:00 PM - 12:15 PM

△ [12a-D419-12] Low temperature formation of indium oxide thin film using solution process with aqueous precursor solution and excimer light assisted annealing

〇(M1)Keisuke Takano¹, Kazuyori Oura¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹, Noritaka Takezoe², Akihiro Shimizu², Hiroyasu Ito² (1.Osaka Inst. of Tech., 2.Ushio Inc.)

Oral presentation

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 1:45 PM - 5:45 PM D419 (11-419)

Takayoshi Oshima(FLOSFIA), Masataka Higashiwaki(NICT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

▼ [12p-D419-1] Tunability band edges of valence band and conduction band in amorphous Cd–In–Ga–O system

〇(D)Minseok Kim¹, Hiroshi Yanagi¹ (1.Univ. of Yamanashi)

2:00 PM - 2:15 PM

[12p-D419-2] Tailoring the hole mobility in SnO films by modulating the growth thermodynamics and kinetics

〇Makoto Minohara¹, Akane Samizo², Naoto Kikuchi¹, Kyoko Bando¹, Yoshiyuki Yoshida¹, Yoshihiro Aiura¹ (1.AIST, 2.Tokyo Univ. of Sci.)

2:15 PM - 2:30 PM

△ [12p-D419-3] Hole generation and charge compensation by structural defects in p-type ternary Sn²⁺ oxides

〇(DC)Akane Samizo^1,2, Naoto Kikuchi², Makoto Minohara², Kyoko Bando³, Yoshihiro Aiura², Keishi Nishio¹ (1.Tokyo Univ. of Sci., 2.Electronics and Photonics RI, AIST, 3.Nanomaterials RI, AIST)

2:30 PM - 2:45 PM

△ [12p-D419-4] Generation of hole carriers in α-SnWO₄

〇Yuka Dobashi^1,2, Akane Samizo^1,2, Naoto Kikuchi², Makoto Minohara², Yoshiyuki Aiura², Keishi Nishio¹ (1.Tokyo Univ.Sci, 2.AIST)

2:45 PM - 3:00 PM

△ [12p-D419-5] Synthesis of Zinc Oxide Nanorods Applying for Dye-sensitized Solar Cell

〇(B)Masaya Morimoto¹, Chaoyang Li¹ (1.Kochi Univ. Tech)

3:00 PM - 3:15 PM

△ [12p-D419-6] Time-resolved Photoluminescence Spectroscopy of Rocksalt-structured MgZnO Films

〇Kanta Kudo¹, Kyohei Ishii², Mizuki Ono¹, Kentaro Kaneko², Tomohiro Yamaguchi¹, Kazunobu Shima³, Kohei Kojima³, Shizuo Fujita², Tohru Honda¹, Shigefusa Chichibu³, Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.Kyoto Univ., 3.IMRAM-Tohoku Univ.)

3:15 PM - 3:30 PM

△ [12p-D419-7] The Effects of Thickness on the Properties of Titanium Dioxide Film on conductive Substrate Prepared by Mist Chemical Deposition

〇(B)Suguru Matsumoto¹, Chaoyang Li¹ (1.Kochi Univ. tech)

3:45 PM - 4:00 PM

△ [12p-D419-8] Determination of the energy level of the Fe^2+/3+-transition level in BaTiO₃ and SrTiO₃ by electrical conductance measurement

〇ISSEI SUZUKI¹, Takahisa Omata¹, Leonard Gura², Andreas Klein² (1.Tohoku Univ., 2.Technical Univ. Darmstadt)

4:00 PM - 4:15 PM

▼ [12p-D419-9] The role of water in the synthesis of AlO_x thin films by a mist chemical vapor deposition

〇(DC)Arifuzzaman Rajib Rajib¹, Abdul Kuddus¹, Karim Enamul¹, Shunji Kurosu², Tomofumi Ukai², Yasuhiko Fujii², Masahide Tokuda², Tatsuro Hanajiri², Ryo Ishikawa¹, Keiji Ueno¹, Hajime Shirai¹ (1.Saitama Univ., 2.Toyo Univ.)

4:15 PM - 4:30 PM

△ [12p-D419-10] Crystallization of Ga₂O₃ thin films on MgAl₂O₄ substrate by excimer laser irradiation

〇Takumi Matsushima¹, Hiroyuki Morita¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech, 2.TOSHIMA Manu., 3.KISTEC)

4:30 PM - 4:45 PM

△ [12p-D419-11] PLD growth of Ga₂O₃ based solid-solution films using GaS

〇Kohei Aoyama¹, Takumi Saito¹, Kaisei Kamei¹, Mizuhito Takahashi², Takuto Soma¹, Motohisa Kado³, Akira Ohtomo^1,4 (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.Nippon Rare Metal, 3.Toyota Motor Corporation, 4.MCES)

4:45 PM - 5:00 PM

△ [12p-D419-12] Evaluation of Dislocations in Epitaxial Lateral Overgrown α-Ga₂O₃ by KOH Etching

〇Katsuaki Kawara¹, Takayoshi Oshima¹, Mitsuru Okigawa¹, Takashi Shinohe¹ (1.FLOSFIA)

5:00 PM - 5:15 PM

△ [12p-D419-13] Surface Reconstructed Structure Analysis of β-Ga₂O₃ (\overline{2}01) Single Crystal

〇Yuto Wakizaka¹, Antoine Fleurence¹, Tatsuya Murakami¹, Yukika Yamada-Takamura¹ (1.JAIST)

5:15 PM - 5:30 PM

▼ [12p-D419-14] Observation of Reverse Leakage Current in (001) b-Gallium Oxide
Schottky Barrier Diodes by High Sensitive Emission Microscope

〇(M2)Sayleap Sdoeung¹, Kohei Sasaki², Akito Kuramata², Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Technology)

5:30 PM - 5:45 PM

▼ [12p-D419-15] High current (0.78 A/mm) and high voltage (618 V) operation of NO₂-doped diamond MOSFETs

〇(D)Niloy Chandra Saha¹, Y. Kawamata², K. Koyama², S. -W. Kim², T. Oishi¹, M. Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Oral presentation

[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 9:00 AM - 12:15 PM D419 (11-419)

Kentaro Kaneko(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[13a-D419-1] Influence of unintentionally incorporated Ar contents on the properties of magnetron-sputtered Al-doped ZnO polycrystalline films

〇Junichi Nomoto¹, Hisao Makino², Tetsuo Tsuchiya¹, Tetsuya Yamamoto² (1.Advanced Coating Technology Research Center, AIST, 2.Research Inst. Kochi Univ. Tech.)

9:15 AM - 9:30 AM

[13a-D419-2] Characterization of optical property in an Mg_xZn_1-xO/n-ZnO

〇Haruyuki Endo¹, Kazuyuki Meguro¹, Takashi Abe¹, Kyo Takahashi¹, Yasube Kashiwaba² (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)

9:30 AM - 9:45 AM

[13a-D419-3] Correspondence between PL spectra and conductive properties of ZnO films - IV

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

9:45 AM - 10:00 AM

[13a-D419-4] Chemical-bonding states of transparent conductive Al-doped ZnO films containing retained Ar atoms

〇Tetsuya Yamamoto¹, Junichi Nomoto², Hisao Makino¹, Tetsuo Tsuchiya² (1.Kochi Univ. Tech., 2.AIST, ACT)

10:00 AM - 10:15 AM

[13a-D419-5] Dominant factors limiting carrier transport of ultra thin W-doped In₂O₃ films

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, ltd.)

10:15 AM - 10:30 AM

[13a-D419-6] Orientation Dependence on SrTiO₃ in Photoelectrochemical Water Splitting

〇(M1C)Soraya Shizumi¹, Yuki Imazeki¹, Supawan Ngamprapawat¹, Masahiro Sato², Katsushi Fujii³, Tsutomu Minegishi², Yoshiaki Nakano¹, Masakazu Sugiyama² (1.Univ. Tokyo, 2.Univ. Tokyo, RCAST, 3.RIKEN)

10:45 AM - 11:00 AM

[13a-D419-7] Investigation of Etching Characteristics of HVPE-In₂O₃ Layers by Hydrogen-Environment Anisotropic Thermal Etching

〇Rie Togashi¹, Ryo Kasaba¹, Yuki Ooe¹, Kenta Nagai², Ken Goto², Yoshinao Kumagai², Akihiko Kikuchi¹ (1.Sophia Univ., 2.Tokyo Univ. of Agri. and Tech.)

11:00 AM - 11:15 AM

[13a-D419-8] Fiber elongation of chemically synthesized Ga₂O₃ nanowires by HCl addition

〇(B)Keishiro Hirota¹, Takuya Funakoshi², Kohki Mukai^1,2 (1.Collage of Engineering Science, Yokohama National Univ., 2.Graduate School of Engineering Science, Yokohama National Univ.)

11:15 AM - 11:30 AM

[13a-D419-9] Epitaxial growth of NiO on MgO (001) substrate by sol-gel dip method

〇Takashi Yasuda¹, Kenji Shirashima¹, Tomoyuki Iki¹ (1.ISU)

11:30 AM - 11:45 AM

[13a-D419-10] Growth of β-Gallium Oxide by Tri-Halide Vapor Phase Epitaxy

〇(D)Kentaro Ema¹, Naoki Ogawa¹, Kohei Sasaki², Akito Kuramata², Hisashi Murakami¹ (1.Tokyo Univ. of Agri. & Tech., 2.NCT)

11:45 AM - 12:00 PM

[13a-D419-11] Characterization of 2-inch Diameter β-Ga₂O₃Crystals Growth by the VB Technique

〇(M1)Kodai Onozuka¹, Tsuyoshi Kobayashi¹, Toshinori Taishi¹, Keigo Hoshikawa^1,2, Etsuko Ohba², Takumi Kobayashi² (1.Shinshu Univ., 2.Fujikoshi Machin. Co.)

12:00 PM - 12:15 PM

[13a-D419-12] Semiconductor Properties of β-Ga₂O₃ Crystals Grown by the VB Technique in Ambient Air

〇(M1)Mamoru Takabe¹, Tsuyoshi Kobayashi¹, Toshinori Taishi¹, Keigo Hoshikawa^1,2, Etsuko Ohba², Takumi Kobayashi² (1.Shinshu Univ., 2.Fujikoshi Machinery.Co.)

Oral presentation

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 1:45 PM - 6:15 PM D419 (11-419)

Takashi Yasuda(Ishinomaki Senshu Univ.), Takumi Ikenoue(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:15 PM

[13p-D419-1] [The 10th Compound Semiconductor Electronics Achievement Award Speech] Growth of GaAs-based, ZnSe-based, and oxide semiconductors with evolutional technologies

〇Shizuo Fujita¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[13p-D419-2] Phase Stability of α-(Al_xGa_1-x)₂O₃ Films Grown on C-Plane Sapphire Substrates

〇(D)Riena Jinno¹, Yasuhisa Masuda¹, Kentaro Kaneko¹, Shizuo Fujita¹ (1.Kyoto Univ.)

2:30 PM - 2:45 PM

[13p-D419-3] Growth of α-Ga₂O₃ thin films by mist chemical vapor deposition using acetylacetonated Ga source solutions

〇Kazuyuki Uno¹, Marika Ohta¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

2:45 PM - 3:00 PM

[13p-D419-4] Epitaxial growth of γ-(Al_xGa_1-x)₂O₃ alloy thin films by mist chemical vapor deposition

〇Ryuto Horie¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

3:00 PM - 3:15 PM

[13p-D419-5] Epitaxial growth of ε-Ga₂O₃thin films on rh-ITO by mist chemical vapor deposition and electrical characterization

〇(M1)Yusuke Ito¹, Yuki Fujiwara¹, Hiroyuki Nishinaka¹, Daisuke Tahara¹, Kazuki Shimazoe¹, Yuta Arata¹, Minoru Noda¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

3:15 PM - 3:30 PM

[13p-D419-6] Structural analysis of α-Ga₂O₃ surface grown on R-plane sapphire by mist chemical vapor deposition

〇Osamu Kubo¹, Daiki Tamba¹, Shun Osaka¹, Masaya Oda², Hiroshi Tabata¹, Mitsuhiro Katayama¹ (1.Osaka Univ., 2.FLOSFIA)

3:30 PM - 3:45 PM

▲ [13p-D419-7] Epitaxial growth of bismuth oxyhalides thin films with mist CVD at atmospheric pressure

〇(DC)Zaichun Sun¹, Daichi Oka¹, Tomoteru Fukumura^1,2 (1.Dept. Chem., Tohoku Univ., 2.AIMR and Core Research Cluster, Tohoku Univ.)

3:45 PM - 4:00 PM

[13p-D419-8] Photocurrent Spectra of N-ion-implanted β-Ga₂O₃ Crystals

〇(B)Masahiko Nakanishi¹, Man Hoi Wong², Tomohiro Yamaguchi¹, Tohru Honda¹, Masataka Higashiwaki², Takeyoshi Onuma¹ (1.Kogakuin Univ., 2.NICT)

4:15 PM - 4:30 PM

[13p-D419-9] Study on crystal and electronic structures of (Ga_xIn_1-x)₂O₃ alloy system

〇Takeshi Hoga^1,2, Akihiro Yamashita^2,3, Toru Asahi³, Toyohiro Chikyow², Takahiro Nagata² (1.NIT (KOSEN), Tsuruoka College, 2.NIMS, 3.Waseda Univ.)

4:30 PM - 4:45 PM

[13p-D419-10] A study of electronic properties on n type β-Ga₂O₃ in contact with the Au/Ti/Cr film electrode by micro-Raman imaging in high temperatures

〇Jun Suda¹, Koki Sato¹, Koji Yamada¹ (1.Chukyo Univ.)

4:45 PM - 5:00 PM

[13p-D419-11] Fabrication of Vertical Schottky Barrier Diodes on β-Ga₂O₃ Substrates Prepared by Vertical Bridgman Method

〇Chiahung Lin¹, Keigo Hoshikawa^2,3, Atsushi Kajikura³, Quang Tu Thieu¹, Amutha Thangaraja¹, Yuki Uchida¹, Yuki Koishikawa¹, Fumio Otsuka¹, Shinya Watanabe¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, 2.Shinshu Univ., 3.Fujikoshi Machinery Corp.)

5:00 PM - 5:15 PM

[13p-D419-12] Estimation of thermal resistance of β-Ga₂O₃ Schottky barrier diode packages fabricated by flip chip bonding technique

〇Shinya Yamaguchi¹, Nobuo Machida¹, Akio Takatsuka¹, Fumio Otsuka¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology, Inc.)

5:15 PM - 5:30 PM

▲ [13p-D419-13] Effects of Polishing Damage on β-Ga₂O₃ Schottky Diodes Electrical Properties

〇(M1)Maria Gouveia^1,2, Aboulaye Traore^1,3, Hitoshi Umezawa³, Hideki Inaba³, Toshimitsu Ito³, Takeaki Sakurai¹ (1.Univ. of Tsukuba, 2.Univ. of Grenoble-Alpes, 3.AIST)

5:30 PM - 5:45 PM

[13p-D419-14] High breakdown voltage MOS capacitor fabricated on the β-Ga₂O₃ epitaxial layer with low donor concentration

〇Daiki Wakimoto¹, Kouhei Sasaki¹, Hironobu Miyamoto¹, Quang Tu Thieu¹, Akito Kuramata¹, Shigenobu Yamakosi¹ (1.Novel Crystal Technology)

5:45 PM - 6:00 PM

[13p-D419-15] High Temperature Operation of Normally-off β-Ga₂O₃ MOSFET

〇Yuuki Uchida¹, Tadashi Kase¹, Kazuo Aoki¹, Shigenobu Yamakoshi¹, Kohei Sasaki¹, Akito Kuramata¹ (1.NCT)

6:00 PM - 6:15 PM

[13p-D419-16] Ga₂O₃ MOSFET with Maximum Oscillation Frequency of 27 GHz

〇Takafumi Kamimura¹, Yoshiaki Nakata¹, Masataka Higashiwaki¹ (1.NICT)

Poster presentation

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 15, 2020 9:30 AM - 11:30 AM PA5 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

▼ [15a-PA5-1] Enhancing power of ZnO nanoparticle LEDs using silica coated silver Nano particles

〇(M1)RAJ DEEP¹, Atsuya Tabuchi¹, Yuki Konishi¹, Islam Mohammad Shafiqul¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.SNCC Co. Ltd)

9:30 AM - 11:30 AM

▲ [15a-PA5-2] p-ZnO/n-ZnO Nanoparticles based UV Light Emitting Diodes

〇(D)ISLAM MOHAMMAD SHAFIQUL¹, Atsuya Tabuchi¹, Yuki Konishi¹, Chihiro Sakurai¹, Jie Lin², Toshiyuki Yoshida¹, Yasuhisa Fujita^1,2 (1.Shimane University, 2.SNCC Co., Ltd)

9:30 AM - 11:30 AM

[15a-PA5-3] Influence of wettability of surface modified gate insulator on electrical properties of amorphous In₂O₃thin-film transistors

〇(B)Keisuke Sasaki¹, Keisuke Nakamura¹, Shinya Aikawa¹ (1.kougakuin univ.)

9:30 AM - 11:30 AM

[15a-PA5-4] Growth partial pressure dependences and heat treatment effects on PLD growth of Al-doped ZnO thin films

〇(M1)Toshihiro Kumatani¹, Kazuyori Oura¹, Hideo Wada¹, Masatoshi Koyama¹, Toshihiko Maemoto¹, Shigehiko Sasa¹ (1.Osaka Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-5] Low temperature top-gate IGZO TFT using SiO:F film by ICP CVD

〇Toshihiko Sakai¹, Daisuke Matsuo¹, Masaki Fujiwara¹, Takuya Ikeda¹, Shigeaki Kishida¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹, Ryoko Miyanaga², Mami Fujii², Yukiharu Uraoka² (1.Nissin Electric, 2.NAIST)

9:30 AM - 11:30 AM

[15a-PA5-6] Increase of Carrier density and Mobility of Ga:ZnO Films by Zn incorporation

〇Masaki Yamashita¹, Rei Sugiura¹, Yumika Yamada², Shuhei Funaki^1,2, Yasuji Yamada^1,2 (1.Shimane Univ.1, 2.Shimane Univ.2)

9:30 AM - 11:30 AM

[15a-PA5-7] Post-deposition Process for Improving Electrical Properties of Sol-gel Deposited ZnO

〇Koji Abe¹, Yasuhiro Morimoto¹ (1.Nagoya Inst. Tech.)

9:30 AM - 11:30 AM

[15a-PA5-8] Fabrication and characterization of In₂O₃transparent conductive films co-sputtered with CaF₂

〇(B)Kaito Oe¹, Shinya Aikawa¹ (1.Kogakuin Univ.)

9:30 AM - 11:30 AM

[15a-PA5-9] Formation and characterization of GZO transparent conductive films on flexible substrates by using plasma-assisted molecular beam deposition (4)

〇Tsutomu Muranaka¹, Tomomu Yamazaki¹, Yohei Sato¹, Kosuke Nakata¹, Yoichi Nabetani¹, Takashi Matsumoto¹ (1.Univ. of Yamanashi)

9:30 AM - 11:30 AM

△ [15a-PA5-10] Epitaxial Growth and Characterization of Various Plane of Single-Phase Metastable Rhombohedral Indium Tin Oxide Thin Films by Using Mist CVD Method.

〇(M1)Kazuki Shimazoe¹, Hiroyuki Nishinaka¹, Daisuke Tahara¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-11] Anneal Effect on PL of ZnO Nanorods Prepared by Electrochemical Deposition

〇(B)Yuki Goto¹, Satoru Suzuki¹ (1.N.I.T. Kisarazu Col.)

9:30 AM - 11:30 AM

[15a-PA5-12] Electron transport mechanisms in amorphous zinc oxysulfide (ZnO_1-xS_x) thin films

〇Masato Tsuchii¹, Chen Zhen¹, Yasushi Hirose¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

9:30 AM - 11:30 AM

[15a-PA5-13] Anisotropy of electric characteristics in a-Ga₂O₃

〇Ryo Moriya¹, Shohei Aoyama¹, Junjiroh Kikawa¹, Takashi Shinohe², Isao Takahashi², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

9:30 AM - 11:30 AM

[15a-PA5-14] TEM Observation of Sn-doped m-plane α-Ga₂O₃

〇Hiroiki Hayakawa¹, Junjiroh Kikawa¹, Takashi Shinohe², Isao Takahashi², Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.FLOSFIA)

9:30 AM - 11:30 AM

[15a-PA5-15] Mechanical alloying on Ga₂O₃ and Al₂O₃ mixture powders

〇Hiroaki Kishimura¹ (1.NDA)

9:30 AM - 11:30 AM

[15a-PA5-16] Band alignment of rock salt structured Mg_xZn_1-xO

〇Yuichi Ota¹ (1.TIRI)

9:30 AM - 11:30 AM

△ [15a-PA5-17] Self-Trapped Holes in Gallium Oxide Polymorphs from First Principles

〇(M2)Tomoya Gake¹, Yu Kumagai¹, Fumiyasu Oba¹ (1.Tokyo Tech)

9:30 AM - 11:30 AM

[15a-PA5-18] Crystallinity and physical property evaluations of epitaxial NiO thin films prepared by using mist CVD method

〇Akito Igarashi¹, Chinami Hoshino¹, Kentaro Kinoshita¹ (1.Tokyo Univ. of Sci.)

9:30 AM - 11:30 AM

[15a-PA5-19] Epitaxial growth of ε-Ga₂O₃ thin films on β-Ga₂O₃(-201) substrates by mist CVD method

〇Yuki Kajita¹, Hiroyuki Nishinaka¹, Daisuke Tahara¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-20] Fabrication of 4-inch β-Ga₂O₃ Bulk Substrates and Homoepitaxial Films by EFG and HVPE Methods

〇Chiahung Lin¹, Quang Tu Thieu¹, Ravikiran Lingaparthi¹, Thangaraja Amutha¹, Yuki Uchida¹, Fumio Otsuka¹, Kimiyoshi Koshi¹, Shinya Watanabe¹, Kohei Sasaki¹, Akito Kuramata¹ (1.Novel Crystal Technology)

9:30 AM - 11:30 AM

[15a-PA5-21] Inductively coupled plasma sputtering system of oxide semiconductors for large area deposition

〇Shigeaki Kishida¹, Daisuke Matsuo¹, Takuya Ikeda¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹ (1.Nissin Electric)

9:30 AM - 11:30 AM

[15a-PA5-22] Epitaxial growth of NiO thin films by RF reactive magnetron sputtering for the investigation of defect properties

〇Keisuke Nishimoto¹, Joonam Kim^1,2, Mutsumi Sugiyama^1,2 (1.Tokyo Univ. Sci, 2.RIST)

9:30 AM - 11:30 AM

[15a-PA5-23] Nitrogen doping and annealing for ZnO films grown by a catalytic reaction-assisted CV

Taro Saito¹, Ryuta Iba¹, Hiroki Kanbayashi¹, Ariyuki Kato¹, 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol.)

9:30 AM - 11:30 AM

[15a-PA5-24] Mist chemical vapor deposition of flexible and epitaxial wide-bandgap oxide semiconductors on synthetic mica

〇Yuta Arata¹, Hiroyuki Nishinaka¹, Kazuki Shimazoe¹, Daisuke Tahara¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

9:30 AM - 11:30 AM

[15a-PA5-25] ZnO-based nano/micro crystal scanning electron microscope image like image-generation using generative adversarial networks

〇Tetsuya Kouno¹, Kosei Ohashi¹, Kenya Fujiwara¹, Mikihiro Yamamoto¹ (1.Shizuoka Univ.)

Sessions

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12a-D419-8] Thin film transistor using hydrogen-doped a-Ga-O

△ [12a-D419-9] Reliability of an amorphous carbon-doped In2O3 thin-film transistors under negative and positive bias stress

▼ [12a-D419-10] Electric Field Thermopower Modulation Analyses of the Operation Mechanism of Amorphous SnO2 Thin Film Transistor

▼ [12a-D419-11] Development of thin film transistor using an amorphous mixed-anion semiconductor a-ZnOS

△ [12a-D419-12] Low temperature formation of indium oxide thin film using solution process with aqueous precursor solution and excimer light assisted annealing

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [12p-D419-1] Tunability band edges of valence band and conduction band in amorphous Cd–In–Ga–O system

△ [12p-D419-3] Hole generation and charge compensation by structural defects in p-type ternary Sn2+ oxides

△ [12p-D419-4] Generation of hole carriers in α-SnWO4

△ [12p-D419-5] Synthesis of Zinc Oxide Nanorods Applying for Dye-sensitized Solar Cell

△ [12p-D419-6] Time-resolved Photoluminescence Spectroscopy of Rocksalt-structured MgZnO Films

△ [12p-D419-7] The Effects of Thickness on the Properties of Titanium Dioxide Film on conductive Substrate Prepared by Mist Chemical Deposition

△ [12p-D419-8] Determination of the energy level of the Fe2+/3+-transition level in BaTiO3 and SrTiO3 by electrical conductance measurement

▼ [12p-D419-9] The role of water in the synthesis of AlOx thin films by a mist chemical vapor deposition

△ [12p-D419-10] Crystallization of Ga2O3 thin films on MgAl2O4 substrate by excimer laser irradiation

△ [12p-D419-11] PLD growth of Ga2O3 based solid-solution films using GaS

△ [12p-D419-12] Evaluation of Dislocations in Epitaxial Lateral Overgrown α-Ga2O3 by KOH Etching

△ [12p-D419-13] Surface Reconstructed Structure Analysis of β-Ga2O3 (\overline{2}01) Single Crystal

▼ [12p-D419-14] Observation of Reverse Leakage Current in (001) b-Gallium OxideSchottky Barrier Diodes by High Sensitive Emission Microscope

▼ [12p-D419-15] High current (0.78 A/mm) and high voltage (618 V) operation of NO2-doped diamond MOSFETs

[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▲ [13p-D419-7] Epitaxial growth of bismuth oxyhalides thin films with mist CVD at atmospheric pressure

▲ [13p-D419-13] Effects of Polishing Damage on β-Ga2O3 Schottky Diodes Electrical Properties

[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [15a-PA5-1] Enhancing power of ZnO nanoparticle LEDs using silica coated silver Nano particles

▲ [15a-PA5-2] p-ZnO/n-ZnO Nanoparticles based UV Light Emitting Diodes

△ [15a-PA5-10] Epitaxial Growth and Characterization of Various Plane of Single-Phase Metastable Rhombohedral Indium Tin Oxide Thin Films by Using Mist CVD Method.

△ [15a-PA5-17] Self-Trapped Holes in Gallium Oxide Polymorphs from First Principles

Authentication

△ [12a-D419-9] Reliability of an amorphous carbon-doped In₂O₃ thin-film transistors under negative and positive bias stress

▼ [12a-D419-10] Electric Field Thermopower Modulation Analyses of the Operation Mechanism of Amorphous SnO₂ Thin Film Transistor

△ [12p-D419-3] Hole generation and charge compensation by structural defects in p-type ternary Sn²⁺ oxides

△ [12p-D419-4] Generation of hole carriers in α-SnWO₄

△ [12p-D419-8] Determination of the energy level of the Fe^2+/3+-transition level in BaTiO₃ and SrTiO₃ by electrical conductance measurement

▼ [12p-D419-9] The role of water in the synthesis of AlO_x thin films by a mist chemical vapor deposition

△ [12p-D419-10] Crystallization of Ga₂O₃ thin films on MgAl₂O₄ substrate by excimer laser irradiation

△ [12p-D419-11] PLD growth of Ga₂O₃ based solid-solution films using GaS

△ [12p-D419-12] Evaluation of Dislocations in Epitaxial Lateral Overgrown α-Ga₂O₃ by KOH Etching

△ [12p-D419-13] Surface Reconstructed Structure Analysis of β-Ga₂O₃ (\overline{2}01) Single Crystal

▼ [12p-D419-14] Observation of Reverse Leakage Current in (001) b-Gallium Oxide
Schottky Barrier Diodes by High Sensitive Emission Microscope

▼ [12p-D419-15] High current (0.78 A/mm) and high voltage (618 V) operation of NO₂-doped diamond MOSFETs

▲ [13p-D419-13] Effects of Polishing Damage on β-Ga₂O₃ Schottky Diodes Electrical Properties