The 67th JSAP Spring Meeting 2020

Presentation information

Print

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 1:45 PM - 5:45 PM D419 (11-419)

Takayoshi Oshima(FLOSFIA), Masataka Higashiwaki(NICT)

4:45 PM - 5:00 PM

△ [12p-D419-12] Evaluation of Dislocations in Epitaxial Lateral Overgrown α-Ga2O3 by KOH Etching

〇Katsuaki Kawara1, Takayoshi Oshima1, Mitsuru Okigawa1, Takashi Shinohe1 (1.FLOSFIA)

Keywords:Ga2O3, dislocation, etching

Dislocations in epitaxial lateral grown α-Ga2O3 islands were evaluated by KOH etching. It was revealed that the etch-pit method was applicable to α-Ga2O3 crystal, and it is implied that dislocations bent in direction of facets and annihilated. Moreover, there was in-plane anisotropy in the direction of the bent dislocations. This results implied that in-plane anisotropy was an important factor in controlling dislocations in epitaxial lateral overgrowth of α-Ga2O3.