The 67th JSAP Spring Meeting 2020

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Mar 12, 2020 1:45 PM - 5:45 PM D419 (11-419)

Takayoshi Oshima(FLOSFIA), Masataka Higashiwaki(NICT)

5:00 PM - 5:15 PM

[12p-D419-13] Surface Reconstructed Structure Analysis of β-Ga2O3 (\overline{2}01) Single Crystal

Yuto Wakizaka1, Antoine Fleurence1, Tatsuya Murakami1, Yukika Yamada-Takamura1 (1.JAIST)

Keywords:Gallium Oxide, Surface, Wide-bandgap semiconductor

β-Ga2O3 is a promising wide bandgap semiconducting material which can give rise to power electrical devices with better performances and lower cost than conventional semiconductors. For instance, Schottky barrier diodes with excellent performances were realized by growing epitaxially metals on (\overline{2}01)-oriented β-Ga2O3 single-crystals. There are so far only few studies of the β-Ga2O3 (\overline{2}01) surface, which are important to improve the performance of such devices. In this study, we analyzed experimentally the structure and the electronic properties of the (\overline{2}01) surface before and after annealing β-Ga2O3 single crystals. As a result of annealing at 1100 ℃ for 3 hours in air, atomically flat terraces were observed. These terraces are (1×3)-reconstructed with the change of periodicity occurring along the [010] direction. In this presentation, the atomic structure of the (1×3)-reconstruction of the β-Ga2O3 (\overline{2}01) surface and its electric properties will be discussed in detail.