[12p-D419-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [12p-D419-13] Surface Reconstructed Structure Analysis of β-Ga₂O₃ (\overline{2}01) Single Crystal

〇Yuto Wakizaka¹, Antoine Fleurence¹, Tatsuya Murakami¹, Yukika Yamada-Takamura¹ (1.JAIST)

Keywords:Gallium Oxide, Surface, Wide-bandgap semiconductor

β-Ga₂O₃ is a promising wide bandgap semiconducting material which can give rise to power electrical devices with better performances and lower cost than conventional semiconductors. For instance, Schottky barrier diodes with excellent performances were realized by growing epitaxially metals on (\overline{2}01)-oriented β-Ga₂O₃ single-crystals. There are so far only few studies of the β-Ga₂O₃ (\overline{2}01) surface, which are important to improve the performance of such devices. In this study, we analyzed experimentally the structure and the electronic properties of the (\overline{2}01) surface before and after annealing β-Ga₂O₃ single crystals. As a result of annealing at 1100 ℃ for 3 hours in air, atomically flat terraces were observed. These terraces are (1×3)-reconstructed with the change of periodicity occurring along the [010] direction. In this presentation, the atomic structure of the (1×3)-reconstruction of the β-Ga₂O₃ (\overline{2}01) surface and its electric properties will be discussed in detail.