[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-5] Low temperature top-gate IGZO TFT using SiO:F film by ICP CVD

〇Toshihiko Sakai¹, Daisuke Matsuo¹, Masaki Fujiwara¹, Takuya Ikeda¹, Shigeaki Kishida¹, Yoshitaka Setoguchi¹, Yasunori Andoh¹, Ryoko Miyanaga², Mami Fujii², Yukiharu Uraoka² (1.Nissin Electric, 2.NAIST)

Keywords:IGZO, ICP, CVD