[15a-PA5-1~25] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[15a-PA5-23] Nitrogen doping and annealing for ZnO films grown by a catalytic reaction-assisted CV

Taro Saito¹, Ryuta Iba¹, Hiroki Kanbayashi¹, Ariyuki Kato¹, 〇Kanji Yasui¹ (1.Nagaoka Univ. Technol.)

Keywords:ZnO, nitrogen doping, annealing

Attempting to the nitrogen doping to ZnO films grown by a catalytic reaction assisted CVD using high-energy H₂O molecules, nitrogen radicals generated on heated Ir wire surface were supplied during the film growth. As a result of the secondary ion mass spectroscopy (SIMS) measurement, incorporation of nitrogen on the order of 10¹⁹ cm^-3 was confirmed. Thermal annealing in NO gas was also investigated. By X-ray photoelectron spectroscopy, the proportion of Zn-N component in N-1s peak for the ZnO film increased by the NO gas annealing.