Rie Togashi

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Speaker, Author, Co-Author

Fri. Mar 13, 2020 9:00 AM - 12:15 PM D419 (11-419)

Oral presentation
| Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

10:45 AM - 11:00 AM

[13a-D419-7] Investigation of Etching Characteristics of HVPE-In₂O₃ Layers by Hydrogen-Environment Anisotropic Thermal Etching

〇Rie Togashi¹, Ryo Kasaba¹, Yuki Ooe¹, Kenta Nagai², Ken Goto², Yoshinao Kumagai², Akihiko Kikuchi¹ (1.Sophia Univ., 2.Tokyo Univ. of Agri. and Tech.)