10:45 AM - 11:00 AM
[13a-D419-7] Investigation of Etching Characteristics of HVPE-In2O3 Layers by Hydrogen-Environment Anisotropic Thermal Etching
Keywords:oxide semiconductor, etching, thermodynamic analysis
Oral presentation
Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Fri. Mar 13, 2020 9:00 AM - 12:15 PM D419 (11-419)
Kentaro Kaneko(Kyoto Univ.)
10:45 AM - 11:00 AM
Keywords:oxide semiconductor, etching, thermodynamic analysis