Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13a-D419-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 13, 2020 9:00 AM - 12:15 PM D419 (11-419)

Kentaro Kaneko(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

9:00 AM - 9:15 AM

[13a-D419-1] Influence of unintentionally incorporated Ar contents on the properties of magnetron-sputtered Al-doped ZnO polycrystalline films

〇Junichi Nomoto¹, Hisao Makino², Tetsuo Tsuchiya¹, Tetsuya Yamamoto² (1.Advanced Coating Technology Research Center, AIST, 2.Research Inst. Kochi Univ. Tech.)

9:15 AM - 9:30 AM

[13a-D419-2] Characterization of optical property in an Mg_xZn_1-xO/n-ZnO

〇Haruyuki Endo¹, Kazuyuki Meguro¹, Takashi Abe¹, Kyo Takahashi¹, Yasube Kashiwaba² (1.Iwate Ind. Res. Inst., 2.Iwate Univ.)

9:30 AM - 9:45 AM

[13a-D419-3] Correspondence between PL spectra and conductive properties of ZnO films - IV

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

9:45 AM - 10:00 AM

[13a-D419-4] Chemical-bonding states of transparent conductive Al-doped ZnO films containing retained Ar atoms

〇Tetsuya Yamamoto¹, Junichi Nomoto², Hisao Makino¹, Tetsuo Tsuchiya² (1.Kochi Univ. Tech., 2.AIST, ACT)

10:00 AM - 10:15 AM

[13a-D419-5] Dominant factors limiting carrier transport of ultra thin W-doped In₂O₃ films

〇Yutaka Furubayashi¹, Makoto Maehara², Toshiyuki Sakemi², Hisashi Kitami^1,2, Tetsuya Yamamoto¹ (1.Kochi Univ. Tech., 2.Sumitomo Heavy Industries, ltd.)

10:15 AM - 10:30 AM

[13a-D419-6] Orientation Dependence on SrTiO₃ in Photoelectrochemical Water Splitting

〇(M1C)Soraya Shizumi¹, Yuki Imazeki¹, Supawan Ngamprapawat¹, Masahiro Sato², Katsushi Fujii³, Tsutomu Minegishi², Yoshiaki Nakano¹, Masakazu Sugiyama² (1.Univ. Tokyo, 2.Univ. Tokyo, RCAST, 3.RIKEN)

10:45 AM - 11:00 AM

[13a-D419-7] Investigation of Etching Characteristics of HVPE-In₂O₃ Layers by Hydrogen-Environment Anisotropic Thermal Etching

〇Rie Togashi¹, Ryo Kasaba¹, Yuki Ooe¹, Kenta Nagai², Ken Goto², Yoshinao Kumagai², Akihiko Kikuchi¹ (1.Sophia Univ., 2.Tokyo Univ. of Agri. and Tech.)

11:00 AM - 11:15 AM

[13a-D419-8] Fiber elongation of chemically synthesized Ga₂O₃ nanowires by HCl addition

〇(B)Keishiro Hirota¹, Takuya Funakoshi², Kohki Mukai^1,2 (1.Collage of Engineering Science, Yokohama National Univ., 2.Graduate School of Engineering Science, Yokohama National Univ.)

11:15 AM - 11:30 AM

[13a-D419-9] Epitaxial growth of NiO on MgO (001) substrate by sol-gel dip method

〇Takashi Yasuda¹, Kenji Shirashima¹, Tomoyuki Iki¹ (1.ISU)

11:30 AM - 11:45 AM

[13a-D419-10] Growth of β-Gallium Oxide by Tri-Halide Vapor Phase Epitaxy

〇(D)Kentaro Ema¹, Naoki Ogawa¹, Kohei Sasaki², Akito Kuramata², Hisashi Murakami¹ (1.Tokyo Univ. of Agri. & Tech., 2.NCT)

11:45 AM - 12:00 PM

[13a-D419-11] Characterization of 2-inch Diameter β-Ga₂O₃Crystals Growth by the VB Technique

〇(M1)Kodai Onozuka¹, Tsuyoshi Kobayashi¹, Toshinori Taishi¹, Keigo Hoshikawa^1,2, Etsuko Ohba², Takumi Kobayashi² (1.Shinshu Univ., 2.Fujikoshi Machin. Co.)

12:00 PM - 12:15 PM

[13a-D419-12] Semiconductor Properties of β-Ga₂O₃ Crystals Grown by the VB Technique in Ambient Air

〇(M1)Mamoru Takabe¹, Tsuyoshi Kobayashi¹, Toshinori Taishi¹, Keigo Hoshikawa^1,2, Etsuko Ohba², Takumi Kobayashi² (1.Shinshu Univ., 2.Fujikoshi Machinery.Co.)

Session information