[13p-D419-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[13p-D419-10] A study of electronic properties on n type β-Ga₂O₃ in contact with the Au/Ti/Cr film electrode by micro-Raman imaging in high temperatures

〇Jun Suda¹, Koki Sato¹, Koji Yamada¹ (1.Chukyo Univ.)

Keywords:Ga2O3, Raman imaging, electronic properties

As an ideal material for high power devices, properties of n-type β-Ga₂O₃ single crystals at different temperatures, especially at high temperatures, are significant to its practical applications. However, using widegap semiconductor as MOS-FET for high-power inverter at the high temperature about 200℃ in general, the difference of values in thermal expansion coefficient between an electrode contact and the surface of widegap semiconductor would lead to peeling of an electrode and a crack on the electrode contact interface. In this study, we perform 3D-Raman imaging measurements in n-type β-Ga₂O₃ crystals in contact with the Au/Ti/Cr multilayer film electrode at about 200℃ and investigate electronic properties in n-type β-Ga₂O₃ in contact with the Au/Ti/Cr electrode film by the line shape of the 418cm^-1 peak (A_g mode) by using dielectric analysis.